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Open Access Journal of
eISSN: 2641-9335

Mathematical and Theoretical Physics

Research Article Volume 2 Issue 1

Exact analytical Model for the Evaluation of complex Einstein relation for disordered semiconductor with parabolic band

BK Chaudhuric, PK Chakrabortya, BN Mondalb

Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, India
Department of Central Scientific Services, Indian Association for the Cultivation of Science, India
CRCR, Jadavpur University, Kolkata -700032, India

Received: January 31, 2019 | Published: February 28, 2019

Citation: Chakrabortya PK, Mondalb BN, Chaudhuric BK. Exact analytical Model for the Evaluation of complex Einstein relation for disordered semiconductor with parabolic band. Open Acc J Math Theor Phy. 2019;2(1):22-27. DOI: 10.15406/oajmtp.2019.02.00048

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Abstract

The present manuscript exhibits a simple analytical model for the evaluation of the Einstein Relation(ER) of a disordered semiconductor having band-tail in energy spectrum as well as density-of-states (DOS) functions, through the presence of exponential and error functional behavior with respect to Normalized energy(E/?e), demonstrates a complex functions, containing both real as well as imaginary terms of different Fermi-Integrals (FIs)and their derivatives. Their module provides an oscillatory function. The total ER, over the entire energy regions of the band-tail curve is described as Cumulative Effects denoted a complex value. On the other band, the same ER for the positive and negative energy region of the band of the band-tail curves are known as the Distributive Effects in the band-zone and tail zone, respectively. The distributive effects are real and positive values. The Cumulative effect is a sum of the two distributive effects which has no mathematical justification. These contradictions are systematically explained with the proper justification in the manuscript.

Keywords: Einstein relation, cumulative effects, contradictions, gaussian density, amorphous semiconductors, diffusion co-efficient, analytical model

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