Research Article Volume 2 Issue 1
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, India
Department of Central Scientific Services, Indian Association for the Cultivation of Science, India
CRCR, Jadavpur University, Kolkata -700032, India
Received: January 31, 2019 | Published: February 28, 2019
Citation: Chakrabortya PK, Mondalb BN, Chaudhuric BK. Exact analytical Model for the Evaluation of complex Einstein relation for disordered semiconductor with parabolic band. Open Acc J Math Theor Phy. 2019;2(1):22-27. DOI: 10.15406/oajmtp.2019.02.00048
The present manuscript exhibits a simple analytical model for the evaluation of the Einstein Relation(ER) of a disordered semiconductor having band-tail in energy spectrum as well as density-of-states (DOS) functions, through the presence of exponential and error functional behavior with respect to Normalized energy(E/?e), demonstrates a complex functions, containing both real as well as imaginary terms of different Fermi-Integrals (FIs)and their derivatives. Their module provides an oscillatory function. The total ER, over the entire energy regions of the band-tail curve is described as Cumulative Effects denoted a complex value. On the other band, the same ER for the positive and negative energy region of the band of the band-tail curves are known as the Distributive Effects in the band-zone and tail zone, respectively. The distributive effects are real and positive values. The Cumulative effect is a sum of the two distributive effects which has no mathematical justification. These contradictions are systematically explained with the proper justification in the manuscript.
Keywords: Einstein relation, cumulative effects, contradictions, gaussian density, amorphous semiconductors, diffusion co-efficient, analytical model
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