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Material Science & Engineering International Journal

Review Article Volume 6 Issue 3

Group theoretical methods in solid state Physics of SnO2

Eunsung Jekal, Sungjin Park

Jekal’s LAB, Munsu-ro 471, Ulsan, South Korea

Correspondence: Eunsung Jekal, Jekal’s LAB, Munsu-ro 471, Ulsan, South Korea Jekal’s LAB, Munsu-ro 471, Ulsan, South Korea

Received: August 10, 2022 | Published: September 6, 2022

Citation: Jekal E, Park S. Group theoretical methods in solid state Physics of SnO2 . Material Sci & Eng. 2022;6(3):111-116 DOI: 10.15406/mseij.2022.06.00187

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Abstract

Oxide semiconductor SnO2 shows excellent photoelectronic properties and sensitivities of gases. It is known that their special properties are originated by a stable large band-gap. In nano-SnO2, the above properties have been extensively explored, and nano-SnO2 will find wide applications in microelectronics, photoelectronics, sensor and compound function ceramics. According to our study using group theory, a single SnO2 crystal with rutile-type structure shows four Raman active modes, A 1g, B 1g, B 2g and E g. The additional A  and E μ modes correspond to transverse-optical (TO) and longitudinal-optical (LO) vibrations. Moreover, we applied application of perturbation theory, consequently, the spectrum of commercial SnO2 sample showed the Raman bands in accordance with the theory.

Keywords: group theory, SnO2

Introduction

The unique structure and unique physical and chemical properties of nanomaterials have recently attracted a lot of attention. In general, nanostructured materials are composed of crystal grain components including nanocrystalline, nanocluster assemblies, and nano amorphous particles, and interface components formed by large interfaces and surfaces.1-4 Interface and surface structure have been widely studied until recently. Various types of interfacial structural models have been proposed for gas-like models, order and extended order models, and nanostructured materials. Distribution of structural characteristics Various intrinsic characteristics of nanomaterials are described in terms of interface and surface structure, while the effect of the internal microstructure of the particles is generally neglected. In fact, in other manufacturing methods, the microstructure of the nanomaterial may be nanocrystals, nanocrystalline particles, or a nanocluster assembly with some crystal characteristics. Since particles are basic components of nanomaterials, changes in internal microstructure inevitably change physical and chemical properties. Therefore, research on the microstructure inside the particles can help clarify the general structure of nanomaterials and explain the corresponding experimental results.5,6

X-ray diffraction is a powerful tool commonly used to study the structure of materials. For nanomaterials, XRD is used to determine the crystal structure, and it is common to approximately estimate the average particle size including a change in particle size according to the annealing temperature. Looking at trends over the past few years, there have been several papers reporting the use of XRD for a more detailed study of lattice distortion of nanomaterials and changes in microstructure according to annealing temperature. Raman spectroscopy, on the other hand, is a powerful tool used to illuminate the spatial symmetry of matter. XRD and Raman’s use spectroscopy can enhance our understanding of the microstructure changes in nanomaterials and signals from various defect states.7-9

SnO2 is a stable large bandgap oxide semiconductor with excellent photoelectronic properties and sensitivity such as gas. The aforementioned properties in NanoSnO2 have been extensively studied, and NanoSnO2 will find a variety of applications in microelectronics, optoelectronics, sensors, and composite functional ceramics. Attempts to improve the properties rely primarily on an understanding of the microstructure of nano SnO2. In this study, we studied the relationship between microstructure changes. Changes in particle and spatial symmetry and causes of lattice distortion according to the annealing temperature of nano SnO2 were discussed.10,11

Methods

Various physical systems such as crystals and individual atoms can be modeled by symmetric groups. Thus, expression theory, which is closely related to group theory, has many important applications in physics, chemistry, and material science. Group theory is also the core of public key encryption.12,13 In physics, a group is important because it describes the symmetry with which the laws of physics seem to follow. According to Noeter’s theorem[?], every successive symmetry of a physical system corresponds to the conservation law of a system. Group theory can be used to address the incompleteness of the statistical interpretation of dynamics developed by Willard Gibbs, which relates to the sum of infinite probabilities to yield meaningful solutions.

In chemistry and material science, point groups classify the symmetry of tetrahedrons and molecules, while space groups are used to classify crystal structures. Assigned groups can be used to determine physical properties, spectroscopic properties (especially Raman spectroscopy, infrared spectroscopy, circular spectroscopy, magnetic circular spectroscopy, UV/Vis spectroscopy, fluorescence spectroscopy) and construct molecular orbitals.

Molecular symmetry is responsible for many physical and spectroscopic properties of compounds and provides relevant information on how chemical reactions take place. To assign a group of points to a given molecule, we need to find the set of symmetric operations that exist on it. Symmetric operations are movements such as rotation around an axis or reflection through a mirror plane. In other words, it is the operation of moving molecules so that they cannot be distinguished from the original configuration. In group theory, the axis of rotation and the plane of the mirror are called "symmetric elements." These elements may be points, lines, or planes at which symmetric operations are performed. The symmetry of a molecule determines a particular group of points for this molecule.

There are five important symmetric operations. They are identity operations (E), rotation operations (Cn), reflection operations (σ), inversion (i), rotation reflection operations, or improper rotation (Sn). The identity operation (E) consists of leaving the molecule intact. This value is equal to the total number of rotations around the axis. This is the symmetry of all molecules, while the symmetry group of chiral molecules consists of only the equivalent action. The identity operation is a feature of all molecules, even without symmetry. Rotation around an axis consists of rotating a molecule at a specific angle around a specific axis. It rotates through an angle of 360 °/ n, where n is an integer with respect to the axis of rotation.

In reflection, many molecules have mirror planes. The reflection operation is exchanged left and right as if each point is moving in a vertical direction through a plane. When the plane is perpendicular to the main axis of rotation, it is called: σh (numerical). The other plane containing the main axis of rotation is labeled vertical (σv) or dihedral ( σd).

The reversal is a more complex task. Each point passes through the center of the molecule and moves to a position opposite to its original position, moving from the center point to the point from which it started. For example, methane and other tetrahedral molecules lack inversion symmetry. To see this, take a methane model with two hydrogen atoms on the right vertical plane and two hydrogen atoms on the left horizontal plane. Inversion produces two hydrogen atoms in the horizontal plane on the right and two hydrogen atoms in the vertical plane on the left. Therefore, since the direction of the molecule according to the inversion action is different from the original direction, the inversion action is not a symmetrical action of methane. And either the last operation is improper rotation or the rotation reflection operation requires a rotation of 360 °/ n, where n and then a reflection through a plane perpendicular to the rotation axis. A COMSOL Multiphysics simulator is used to investigate their characteristics.

Results and discussions

Group theoretical method

Tin oxide (SnO2) has space group number 136. First of all, atomic structure and its topview of SnO2 are presented in Figure 1(a) and (b), respectively.

Figure 1 (a) atomic structure and (b) topview of SnO2. Blue and red spheres are represent Sn and O atoms, respectively. (These figures are drawn by visualization program, VESTA).

If we choose one Sn atom which is placed at the corner as the original position, (0,0,0), the symmetry operations with τ =(0.5,0.5,0.5) are given as:

ϵ|0,C2|0,C4|τ,C34|τ,C2'|τ,C''2|τ,σd|0,σd'|0,i|0,iC2|0,iC4|τ,C34|0,iC2'|τ,iC''2|τ,iσd|0,iσd'|0ϵ|0,C2|0,C4τ,C34|τ,C2'|τ,C''2|τ,σd|0,σd'|0,i|0,iC2|0,iC4|τ,C34|0,iC2'|τ,iC''2|τ,iσd|0,iσd'0   (1)

In the international tables for X-ray crystallography, the sites of Sn and O location are 2a and 4 ff , respectively.

We find the equivalence transformation for SnO2 at the center of the Brillouin zone (Table 1).

 

 {ϵ|0}{ϵ|0}  

 {C2|0}{C2|0}  

 {C4|τ}{C4τ} ,

 {C2'|τ}{C2'τ} ,

 {σd|0}{σd|0} ,

 {i|0}{i|0}  

 {iC2|0}{iC2|0}  

 {iC4|τ}{iC4τ} ,

 

 

 

 {C34|τ}{C34τ}  

 {C''2|τ}{C''2τ}  

 {σd'|0}{σd'|0}  

 

 

 {C34|0}{C340}  

χ (Sn)

 2

 2

 0

 0

 2

 2

 2

 0

χ (O)

 4

 0

 0

 0

 2

 0

 4

 0

χ (total)

 6

 2

 0

 0

 4

 2

 6

 0

Table 1 χatomsitesχatomsites  for SnO2

Also we find the lattice modes at the zone center k=0k=0 , including their symmetries, degeneracies and the normal mode patterns.

At k=0k=0 , the wave vector group contains the full symmetry operations of the space group. The character table of the group of the wave vector would be the same as that of D4hD4h  because of the phase factor eiKτ=1eiKτ=1 . By using the charater table of D4hD4h , we have χ(Sn)= A1g+B 2g, χ(O)= A1g+B2g+Eu , and = χvector=A1g+Eu .

Therefore, the lattice vibration normal modes are given as equation (2).

[χ(Sn)+χ(O)]χvector=(2A1g+2B2g+Eu)(A2u+Eu)=A1g+A2g+2A2u+B1g+2B1u+B2g+Eg+4Eu   (2)

Since all the representations of D 4h are one dimensional except for E μ and E g, they have single modes without degeneracy while E μ and E g modes are doubly degenerated. A  moves along z direction. Both Sn and O atoms are out-of-phase.

B  also moves along z direction. Two Sn atoms which is placed different sites point opposite directions. Similar with Sn, two SnO atoms which is placed different sites point opposite directions. There are two kinds of E g. And both move along z-direction. Movements of Eμ is similar with Eg . But they translate into x and y directions.

For a next step we indicate the IR-activity and Raman activity of these modes. IR-active modes includes A  and 3Eμ  while Raman acitvity modes represent A 1g, B1g , B 2g and Eg .

#1 The A  mode is active to z-polarized light while 3Eμ  modes are active to x or y polarized light.

#2 A1g  and B1g  have diagonal matrix elements but B2g  and Eg  are off-diagonal.

When we move away from k = 0 the mode splitting along the (100) and (001) directions, the group of the wave vector contains {ϵ|0},{iC2z|0},{C2x|τ} , and {iC2y|τ} . Two dimensional k-space is presented in (Figure 2).

Figure 2 2-dimensional K-space. Direction of the mode splitting is denoted as an red arrow. (I remake this figure which is in dresselhaus lecture note).

The individual characters are given in Table 2, where the phase factor e iKτ is taken out.

 

 ϵ  

 iC2z  

 iC2x  

 iC2y  

Δ1

 1

 1

 1

 1

Δ2

 1

 1

 -1

 -1

Δ3

 1

 -1

 1

 -1

Δ4

 1

 -1

 -1

 1

Table 2 Individual character for SnO2

Now, we use the decomposition rule to see how the representations at Γ split in to Δ1, Δ2, Δ3, and Δ4 (Table 3).

 

 ϵ 

 iC2z

 iC2x

 iC2y

 

A1g

 1

 1

 1

 1

Δ1

A

 1

 -1

 1

 -1

Δ3

A2g

 1

 1

 -1

 -1

Δ2

A

 1

 -1

 -1

 1

Δ4

B1g

 1

 1

 1

 1

Δ1

B

 1

 -1

 1

 -1

Δ3

B2g

 1

 1

 -1

 -1

Δ2

B

 1

 -1

 -1

 1

Δ4

Eg

 2

 -2

 0

 0

Δ3+ Δ4

Eμ

 2

 2

 0

 0

Δ1+ Δ2

Table 3 Splitting behaviors in Δ1, Δ2, Δ3, and Δ4 at Γ.

Now, along (001) direction, the group of the wave vector contains {Δε|0},{C4|τ},{C34|τ},{C2z|0},{iC2x|τ},{iC2y|τ},{σd|0} , and {σd'|0} .

Since the point symmetry operations form C  point group, the character can be given as Table 4, where the phase factor e iKτ  is taken out (as same as (100) case). 

 

 ϵ 

 C2z  

 2C4  

 iCx,iCy  

 2σd  

Σ1

 1

 1

 1

 1

 1

Σ2

 1

 1

 1

 -1

 -1

Σ3

 1

 1

 -1

 1

 -1

Σ4

 1

 1

 -1

 -1

 1

Σ5

 2

 -2

 0

 0

 0

Table 4 Characters in prespective of Σn

Table 5 shows the decomposition of each mode.  

 

 ϵ 

 C2  

 2C4  

 2σv  

 2σd  

 

A1g

 1

 1

 1

 1

 1

 Σ1 

A

 1

 1

 1

 -1

 -1

 Σ2 

A2g

 1

 1

 1

 -1

 -1

 Σ2 

A

 1

 1

 1

 1

 1

 Σ1 

B1g

 1

 1

 -1

 1

 -1

 Σ3 

B

 1

 1

 -1

 -1

 1

 Σ4 

B2g

 1

 1

 -1

 -1

 1

 Σ4 

B

 1

 1

 -1

 1

 -1

 Σ3 

Eg

 2

 -2

 0

 0

 0

 Σ5 

Eμ

 2

 -2

 0

 0

 0

 Σ5 

Table 5 Decomposition of each mode of Σn

The splitting mode is presented in Figure 3.

Figure 3 Sketchy of the mode splitting behaviors.

Energy dispersion

Using the empty lattice, we find the energy eigenvalues, degeneracies and symmetry types for the two electronic levels of lowest energy for the fcc lattice at the Γ  point ( k  = 0). Note that the lowest energy state is a non-degenerate state with Γ +1  symmetry.

Reciprocal lattice of fcc →  bcc lattice

The nearest neighbor point in reciprocal lattice:

2πa(111),2πa(111),2πa(111),2πa(111),2πa(111),2πa(111),2πa(111),2πa(111).   (3)

At Γ  point, the energy eigenvalues are given by

E=22mκ2 , where κ2  is the reciprocal lattice vector. Therefore, the lowest energy eigenvalue = 0. Also, second lowest energy eigenvalue can be obtained as followed equation.

22m(2πa)2(12+12+12)=6π22ma2   (4)

Since there are 8 equivalent {1 1 1} points, the degeneracy of the second lowest level is 8. The group of the wave vector at Γ  point is Oh . The characters for the equivalent transform are shown in Table 6.

 

 E 

 3C24  

 6C2  

 8C3  

 6C4  

 i  

 3C24  

 6iC2  

 8iC3  

 6iC4  

χ000

 1

 1

 1

 1

 1

 1

 1

 1

 1

 1

χ111

 8

 0

 0

 2

 0

 0

 0

 4

 0

 0

Table 6 The characters for the equivalent transform of Σn

Therefore, lowest energy and second lowest levels are

χ000=Γ+1(lowest)   (5)

χ111=Γ+1+Γ2+Γ15+Γ+25(second)   (6)

We also find the appropriate linear combination of plane waves which provide basis functions for the two lowest L-point electronic states for the fcc lattice.

At L(πa,πa,πa ) point, the energy levels are given by E= 22m  (k1 + k). The lowest energy level corresponds to

κ=2πa =  (0,0,0) and κ=-2πa =  (-1,-1,-1) with E0 = 32π22ma2

The plane waves are e iπa(x+y+z) for (111) and e iπa(x+y+z) for (-1-1-1).

The second energy level consists of k= 2πa (-1-11), 2πa (1-1-1), 2πa (-11-1), 2πa (00-2), 2πa (0-20), 2πa (-200) with E1 = 112π22ma2 .

The corresponding plane waves are:

eiπa(xy+3z),eiπa(x+y3z),eiπa(x3y+z),eiπa(x3y+z),eiπa(3xyz),eiπa(3xyz).   (7)

We denote these plane wave states by (-1-13), (11-3), (1-31), (3-1-1), (-311).

At L point, the group of the wave vector is D3d , the character is shown in Table 7.

 

 E 

 2C3

 3C2

 i

 2iC3

 3iC2

L1

 1

 1

 1

 1

 1

 1

L2

 1

 1

 -1

 1

 1

 -1

L3

 2

 -1

 0

 2

 -1

 0

L 1 '

 1

 1

 1

 -1

 -1

 -1

L2 '

 1

 1

 -1

 -1

 -1

 1

L3 '

 2

 -1

 0

 -2

 1

 0

Table 7 The group of the wave vector is D3d at L point

The equivalence transform of the plane waves are shown in Table 8.

 

 E 

 2C3

 3C’2

 i

 2iC3

 3iC’2

 

(111), (-1-1-1)

 2

 2

 0

 0

 0

 2

L + 1+L  2

(-311), etc

 6

 0

 0

 0

 0

 2

L + 1+L + 3+L  2+L  3

Table 8 The equivalence transform of the plane waves

The symmetry of the lowest state at L point is L + 1  + L  2 . The basis functions of the two symmetry states are:

L+1:12[(111)+(111)]=cosπa(x+y+z)L2:12i[(111)(111)]=sinπa(x+y+z)   (8)

The symmetry of the second lowest state is L + 1+L + 3+L  2+L  3 . The basis functions are obtained as follows:

L+1:(113)+(113)+(131)+(131)+(311)+(311)=cosπa(x+y3z)+cosπa(x3y+z)+cosπa(3xyz)L+3:(113)(113)+(131)(131)+(311)(311)=sinπa(x+y3z)+sinπa(x3y+z)+sinπa(3xyz)L2:(113)+(113)+ω[(131)+(131)]+ω2(311)+(311)]=cosπa(x+y3z)+ωcosπa+ω2cosπa(3xyz)L3:(113)(113)+ω[(131)(131)]+ω2(311)(311)]=sinπa(x+y3z)+ωsinπa+ω2sinπa(3xyz)   (9)

We had have question that "which states of the lower and upper energy levels in (a) and (b) are coupled by optical dipole transitions?".

At Γ points, χ vector = Γ 15 . The lowest energy state has symmetry Γ +1 .

Γ+1Γ15=Γ15.   (10)

Therefore, only the Γ15  state in the second energy level will couple with Γ+1  state in the lowest energy level. At L point, χvector=L'2+L'3 . The lowest level has symmetry L1 +L’2 . For L1  state, L1    (L’2 +L’3 )= L’2 +L’3. Therefore, the L1  state in the lower level will couple with L’2  and L’3  states in the upper level via optical transition.

For L2  state, L’2    (L’2 +L’3 )= L1 +L3 . Therefore, the L’2  state in the lower level is coupled with L1  and L3  states (Figure 4).

Figure 4 Sketchy of the transition behaviors.

Using compatibility relations, we find the symmetries of the energy levels that connect the two -point and two L-point energy levels. For  = (k=(κ,κ,κ) ), the group of wavevector is C3v  {E,2C3, 3 σ v }.

Therefore equations are presented as followed.

Γ+11L1Γ21L'2Γ151+3L'2+L'3Γ251+3L1+L3   (11)

Perturbation theory

Using Ek perturbation theory and we find the form of the kp relations near the L-point in the Brillouin zone for a face centered cubic lattice arising from the lowest levels with L1  and L’2  symmetry that are doubly degenerate in the free electron model.

Let’s assume |i>  has L1  symmetry and |j>  has L2  has L’  symmetry. Since p  transform as a vector,

χvector =L’2 +L’3  at L point.

L1    L’2  = L’2 . So it contains L’2 .

L2    L’32  = L’3 . So it does not contains L’2 .

Now, let’s take the new κ1 , κ2 , and κ3  coordinates where ˆκ1  is parallel to (111) in the original coordinate. In this new coordinate, κ1  transforms like L'2  whereas κ2 , and κ3  transform like L'3 .

Therefore, the only non-vanishing matrix element is

i|p1|j=L1|p1|L'2=α   (12)

Then, equation would becomes

ϵ(κ)=±12(ϵ2g+42m2κ21α2)1/2   (13)

Therefore,

En(k)=2(k0+κ)22m±12(ϵ2g+42m2κ21α2)1/2   (14)

Using the Slater Koster technique, we find the form for E(k) for the lowest two levels for a face centered cubic lattice.

For fcc lattice, d=0 is the zeroth neighbor at a(0,0,0), d=1 is the nearest neighbor at a(1/2,1/2,0) and d=2 are the second nearest neighbor at a(1,0,0).

En(k)=ϵn(0)+ϵn(1)[cosa2(ky+kz)+cosa2(kykz)+cosa2(kz+kx)+cosa2(kzkx)+cosa2(kx+ky)+cosa2(kxky)]+...   (15)

We expand your our results for the L-point in a Taylor expansion. At L point, k0=(πa,πa,πa)

Let  k=k0+κ

then

cosa2(ky+kz)=cosa2(2πa+κy+κz)=1+12a24(κy+κz)2cosa2(kykz)=112a24(κyκz)2coskxa=cos(a(πa+κx))   (16)

Therefore

En(k)=En(k0+κ)=ϵ'n(0)+ϵ'n(1)(κx+κy+κz)2/2+(ϵ'n(2)ϵ'n(1)/2)(κ2x+κ2y+κ2z)   (17)

 Now, let’s use κ1 , κ2 , κ3   coordinate where κ1  is parallel to (111) direction.

Then we obtain followed equation.

En(k0+κ)=ϵ''n(0)+ϵ''n(1)κ21+ϵ''n(2)κ2=α+βκ21+γ(κ22+κ23)   (18)

Now, let’s Taylor expand the result.

En(k)=22m(|k0|2+2|k0|κ2)±12(ϵ2g+42m2α2κ21)1/2=α'+β'(κ1+δ)2γ'(κ22+κ 2)   (19)

This result suggests that carriers at L point have anisotropic effective mass tensor.

Application of perturbation theory

Using perturbation theory, we find the form of the secular equation for the valence band of Si with Γ+25  symmetry. For the valence band of Si with Γ+25  symmetry, we use the degenerate kp  perturbation theory. Due to the parity requirement (Γ+25|H'|Γ+25 =0 since H’ has the odd parity), we have to to the second-order perturbation.

Since H’ transforms like Γ15  and Γ+25     Γ15  = Γ2  +Γ12  +Γ15  +Γ25 ,

Γ+25  is coupled with only the following intermediated states;

Γ2,Γ12,Γ15,Γ25    (20)

For k=(κ,κ,κ)  where 0<κ<πa , the secular equation becomes followed equation.

E=E0+L+2M±2N3κ2   (21)

 If we suppose that our silicon sample is a thin film with 10 nm thick grown pseudomorphically on a germanium substrate, what happens to E(k) for the silicon valence band in the thin film if the germanium substrate is oriented along a (100) direction or if it is oriented along a (110) direction? Since there is a lattice mismatch between Si and Ge, thin silicon film has tensile stress when it grows on Ge substrate. Therefore, the symmetry of the crystal is reduced as follows:

(100)directionOhD4h(110)directionOhD2h   (22)

Conclusion

Nature of SnO2 particles strongly influenced the corresponding Raman spectra. According to our study using group theory, a single SnO2 crystal with rutile-type structure shows four Raman active modes, A 1g, B 1g, B 2g and E g. The additional A  and E μ modes correspond to transverse-optical (TO) and longitudinal-optical (LO) vibrations. Moreover, we applied application of perturbation theory, consequently, the spectrum of commercial SnO2 sample showed the Raman bands in accordance with the theory.

Conflicts of interest

The authors declare no conflict of interest with respect to the publication of this manuscript.

Acknowledgments

None.

Funding

None.

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