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eISSN: 2574-9927

Material Science & Engineering International Journal

Research Article Volume 2 Issue 6

Doped organic field-effect transistors

Huseynova G

University Dongguk University, South Korea

Received: July 09, 2018 | Published: December 5, 2018

Citation: Huseynov G, Kostianovskii V. Doped organic field-effect transistors. Material Sci & Eng. 2018;2(6):212–215. DOI: 10.15406/mseij.2018.02.00059

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Abstract

Doped organic field-effect transistorsOrganic semiconductors and electronic devices based on these materials continue attracting great interest due to their excellent and unique optoelectronic properties as well as the advantageous possibilities of realizing flexible, light-weight, low-cost, and transparent optoelectronic devices fabricated on ultra-thin and solution-processible active layers. However, their poor electronic performance and unstable operation under ambient conditions limit their application in consumer electronics. This paper presents a brief introduction to doping of organic semiconductors and organic field-effect transistors. The description of the issues regarding charge carrier transport and other optoelectronic properties of organic semiconductors is also provided. The doping agents and methods commonly applied for organic semiconductors along with their fundamental mechanisms are introduced.

Keywords: organic, semiconductors, electronic device, materials, optoelectronic properties, semiconductors, organic chemistry, flexible, light–weight, transparent, ultra-thin

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